MMIX1T500N20X4 Power Si MOSFET

Features

• Blocking voltage of VDSS = 200 V with low RDS(on) = 1.99 mΩ
• High current capability ID25 = 480 A
• DCB-based isolated package
• Compact design with high power density

Benefits

• Low conduction losses and reduced heat dissipation
• Supports high power applications with fewer devices in parallel
• Reduced overall thermal resistance RthJS
• Light weight with ease of assembly
• Reduced thermal management effort